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Electrical Characteristics (T J =25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV DSS
Drain-Source Breakdown Voltage
I D = -250 μ A, V GS = 0V
-30
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate-Body leakage current
V DS = -30V, V GS = 0V
V DS = 0V, V GS = ±25V
T J = 55°C
-1
-5
±100
μ A
nA
V GS(th)
I D(ON)
Gate Threshold Voltage
On state drain current
V DS = V GS I D = -250 μ A
V GS = -10V, V DS = -5V
-1.7
-60
-2.3
-3
V
A
V GS = -20V, I D = -12A
8.5
11
R DS(ON)
Static Drain-Source On-Resistance
V GS = -10V, I D = -12A
T J =125°C
11.5
10
15
13
m ?
V GS = -6V, I D = -10A
12.7
17
g FS
Forward Transconductance
V DS = -5V, I D = -10A
21
S
V SD
Diode Forward Voltage
I S = -1A,V GS = 0V
-0.7
-1
V
I S
Maximum Body-Diode Continuous Current
-3
A
DYNAMIC PARAMETERS
C iss
Input Capacitance
2060
2600
pF
C oss
C rss
Output Capacitance
Reverse Transfer Capacitance
V GS =0V, V DS =-15V, f=1MHz
370
295
pF
pF
R g
Gate resistance
V GS =0V, V DS =0V, f=1MHz
2.4
3.6
?
SWITCHING PARAMETERS
Q g
Total Gate Charge
30
39
nC
Q gs
Q gd
t D(on)
t r
t D(off)
t f
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V GS =-10V, V DS =-15V, I D =-12A
V GS =-10V, V DS =-15V, R L =1.25 ? ,
R GEN =3 ?
4.6
10
11
9.4
24
12
nC
nC
ns
ns
ns
ns
t rr
Body Diode Reverse Recovery Time
I F =-12A, dI/dt=100A/ μ s
30
40
ns
Q rr
Body Diode Reverse Recovery Charge I F =-12A, dI/dt=100A/ μ s
22
nC
A: The value of R θ JA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25 ° C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θ JA is the sum of the thermal impedence from junction to lead R θ JL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using < 300 μ s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 ° C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. E AR and I AR ratings are based on low frequency and duty cycles to keep T j =25C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.11.0 June 2013
www.aosmd.com
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